? semiconductor components industries, llc, 2015 febuary, 2015 ? rev. 5 1 publication order number: ntjd4158c/d ntjd4158c, NVJD4158C small signal mosfet 30 v/?20 v, +0.25/?0.88 a, complementary, sc?88 features ? leading 20 v trench for low r ds(on) performance ? esd protected gate ? sc?88 package for small footprint (2 x 2 mm) ? nv prefix for automotive and other applications requiring unique site and control change requirements; aec?q101 qualified and ppap capable ? these devices are pb?free, halogen free/bfr free and are rohs compliant applications ? dc?dc conversion ? load/power management ? load switch ? cell phones, mp3s, digital cameras, pdas maximum ratings (t j = 25 c unless otherwise noted) parameter symbol value unit drain?to?source v oltage n?ch v dss 30 v p?ch ?20 gate?to?source v oltage n?ch v gs 20 v p?ch 12 n?channel continuous drain current (note 1) steady state t a = 25 c i d 0.25 a t a = 85 c 0.18 p?channel continuous drain current (note 1) steady state t a = 25 c ?0.88 t a = 85 c ?0.63 power dissipation (note 1) steady state t a = 25 c p d 0.27 w pulsed drain cur- rent n?ch tp = 10 s i dm 0.5 a p?ch ?3.0 operating junction and storage temperature t j , t stg ?55 to 150 c source current (body diode) n?ch i s 0.25 a p?ch ?0.48 lead temperature for soldering purposes (1/8 from case for 10 s) t l 260 c thermal resistance ratings parameter symbol max unit junction?to?ambient ? steady state (note 1) r ja 460 c/w stresses exceeding those listed in the maximum ratings table may damage the device. if any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. surface mounted on fr4 board using 1 in sq pad size (cu area = 1.127 in sq [1 oz] including traces). (top view) www. onsemi.com d 1 g 2 s 2 s 1 g 1 d 2 6 5 4 1 2 3 n?ch 30 v 1.0 @ 4.5 v r ds(on) typ 0.25 a i d max v (br)dss 1.5 @ 2.5 v 215 m @ ?4.5 v p?ch ?20 v 345 m @ ?2.5 v ?0.88 a sc?88 (sot?363) (6?leads) xxx m 1 6 1 marking diagram & pin assignment sc?88 (sot?363) case 419b style 26 xxx = specific device code m = date code = pb?free package (note: microdot may be in either location) s1 g1 d2 d1 g2 s2 see detailed ordering and shipping information in the package dimensions section on page 6 of this data sheet. ordering information
ntjd4158c, NVJD4158C www. onsemi.com 2 electrical characteristics (t j = 25 c unless otherwise noted) parameter symbol n/p test condition min typ max unit off characteristics (note 3) drain?to?source breakdown voltage v (br)dss n v gs = 0 v i d = 250 a 30 v p i d = ?250 a ?20 drain?to?source breakdown voltage temperature coefficien t v (br)dss / t j n 33 mv/ c p ?9.0 zero gate voltage drain current i dss n v gs = 0 v, v ds = 30 v t j = 25 c 1.0 a p v gs = 0 v, v ds = ?16 v 1.0 n v gs = 0 v, v ds = 30 v t j = 125 c 0.5 p v gs = 0 v, v ds = ?16 v 0.5 gate?to?source leakage current i gss n v ds = 0 v, v gs = 10 v 1.0 a p v ds = 0 v, v gs = ?4.5 v 1.0 on characteristics (note 2) gate threshold voltage v gs(th) n v gs = v ds i d = 100 a 0.8 1.2 1.5 v p i d = ?250 a ?0.45 negative gate threshold temperature coefficient v gs(th) / t j n 3.2 mv/ c p ?2.7 drain?to?source on resistance r ds(on) n v gs = 4.5 v, i d = 10 ma 1.0 1.5 p v gs = ?4.5 v, i d = ?0.88 a 0.215 0.260 n v gs = 2.5 v, i d = 10 ma 1.5 2.5 p v gs = ?2.5 v, i d = ?0.71 a 0.345 0.500 forward transconductance g fs n v ds = 3.0 v, i d = 10 ma 0.08 s p v ds = ?10 v, i d = ?0.88 a 3.0 charges, capacitances and gate resistance input capacitance c iss n f = 1 mhz, v gs = 0 v v ds = 5.0 v 20 33 pf p v ds = ?20 v 155 225 output capacitance c oss n v ds = 5.0 v 19 32 p v ds = ?20 v 25 40 reverse transfer capacitance c rss n v ds = 5.0 v 7.25 12 p v ds = ?20 v 18 30 total gate charge q g(tot) n v gs = 5.0 v, v ds = 24 v, i d = 0.1 a 0.9 1.5 nc p v gs = ?4.5 v, v ds = ?10 v, i d = ?0.88 a 2.2 3.5 threshold gate charge q g(th) n v gs = 5.0 v, v ds = 24 v, i d = 0.1 a 0.2 p v gs = ?4.5 v, v ds = ?10 v, i d = ?0.88 a 0.2 gate?to?source charge q gs n v gs = 5.0 v, v ds = 24 v, i d = 0.1 a 0.3 p v gs = ?4.5 v, v ds = ?10 v, i d = ?0.88 a 0.5 gate?to?drain charge q gd n v gs = 5.0 v, v ds = 24 v, i d = 0.1 a 0.2 p v gs = ?4.5 v, v ds = ?10 v, i d = ?0.88 a 0.65 switching characteristics (note 3) turn?on delay time t d(on) n v gs = 4.5 v, v dd = 5.0 v, i d = 250 ma, r g = 50 15 ns rise time t r 66 turn?off delay time t d(off) 56 fall time t f 78 turn?on delay time t d(on) p v gs = ?4.5 v, v dd = ?10 v, i d = ?0.5 a, r g = 20 5.8 rise time t r 6.5 turn?off delay time t d(off) 13.5 fall time t f 3.5 drain?source diode characteristics forward diode voltage v sd n v gs = 0 v, t j = 25 c i s = 10 ma 0.65 0.7 v p i s = ?0.48 a ?0.8 ?1.2 n v gs = 0 v, t j = 125 c i s = 10 ma 0.45 p i s = ?0.48 a ?0.66 reverse recovery time t rr n v gs = 0 v, d is /d t = 8.0 a/ s i s = 10 ma 12.4 ns p v gs = 0 v, d is /d t = 100 a/ s i s = ?0.48 ma 10.6 2. pulse test: pulse width 300 s, duty cycle 2%. 3. switching characteristics are independent of operating junction temperatures.
ntjd4158c, NVJD4158C www. onsemi.com 3 typical n?channel performance curves (t j = 25 c unless otherwise noted) 0 0.2 0.1 1.25 0.25 v ds , drain?to?source voltage (volts) i d, drain current (amps) 0.06 0.02 0 figure 1. on?region characteristics 1.25 2.25 1.75 2. 5 0.2 0.15 0.05 1.5 0 1 figure 2. transfer characteristics v gs , gate?t o?source voltage (volts) 0.5 0.4 figure 3. on?resistance vs. drain current and temperature i d, drain current (amps) r ds(on), drain?to?source resistance ( ) i d, drain current (amps) figure 4. on?resistance vs. drain current and gate voltage ?50 0 ?25 25 1.5 1.25 1 0.75 0 50 125 100 figure 5. on?resistance variation with temperature t j , junction temperature ( c) t j = 25 c 1.3 t j = ?55 c t j = 125 c 75 150 i d = 0.01 a v gs = 4.5 v r ds(on), drain?to?source resistance (normalized) 0.5 25 c 2 1.8 v 0.005 0.205 figure 6. drain?to?source leakage current vs. voltage 2 v 2.4 v 1 1.5 v ds = 5 v 0.7 v gs = 2.6 v v gs = 10 v to 2.8 v 0.04 0.08 0.12 0.1 2 t j = 125 c v gs = 4.5 v t j = ?55 c t j = 25 c 1.0 1.75 03 0 v ds, drain?to?source voltage (volts) 10 i dss , leakage (na) 1000 100 10 15 t j = 150 c t j = 125 c 5 v gs = 0 v 0.055 0.105 0.155 0.5 0 i d, drain current (amps) r ds(on), drain?to?source resistance ( ) 2.5 0.005 0.20 5 1.5 v gs = 4 v t j = 25 c 2.0 0.055 0.105 0.155 v gs = 2.5 v 0.5 0.25 20 25 0.18 0.16 0.14 2.2 v 0.75 0.6 0.8 0.9 1.1 1.2 1.0
ntjd4158c, NVJD4158C www. onsemi.com 4 typical n?channel performance curves (t j = 25 c unless otherwise noted) v ds = 0 v v gs = 0 v 0 10 10 30 20 10 0 25 gate?to?source or drain?to?source voltage (volts) c, capacitance (pf) 0 0.2 4 1 0 q g , total gate charge (nc) v gs, gate?to?source vo ltage (volts) t j = 25 c c oss c iss c rss i d = 0.1 a t j = 25 c 50 0.6 2 3 q gd q gs 5 40 5 v gs v ds 15 0.4 1 0.65 0.02 0 v sd , source?to?drain voltage (volts) i s , source current (amps) v gs = 0 v t j = 25 c 0.7 0.7 5 0.1 figure 7. capacitance variation figure 8. gate?to?source voltage vs. total gate charge figure 9. resistive switching time variation vs. gate resistance 5 0.8 q g 0.5 0.6 0.55 0.04 0.06 0.08 20 c rss c iss figure 10. diode forward voltage vs. current 10 1 100 10 100 r g , gate resistance (ohms) t, time (ns) v dd = 5.0 v i d = 0.25 a v gs = 4.5 v t d(off) t d(on) t f t r 1000
ntjd4158c, NVJD4158C www. onsemi.com 5 typical p?channel performance curves (t j = 25 c unless otherwise noted) ?2 v 125 c 0 1 0.75 1.2 0.8 ?v ds , drain?to?source voltage (volts) ?i d, drain current (amps) 0.25 0 0.4 figure 1. on?region characteristics 0 1 1.5 12 0.8 0.7 0.1 0.5 0 3. 5 figure 2. transfer characteristics ?v gs , gate?t o?source voltage (volts) 15 100 10 figure 3. on?resistance vs. drain current and temperature ?v ds , drain?to?source voltage (volts) ?i dss, leakage current (na) ?i d, drain current (amps) 01 0.1 figure 4. on?resistance vs. drain current and gate voltage ?i d, drain current (amps) ?50 0 ?25 25 1.0 0.8 0.6 0.4 0 50 125 100 figure 5. on?resistance variation with temperature t j , junction temperature ( c) t j = 25 c 10000 5 t j = ?55 c v gs = 0 v 0.3 75 150 t j = 25 c i d = ?0.88 a v gs = ?4.5 v r ds(on), drain?to?source resistance (normalized) 25 c r ds(on), drain?to?source resistance ( ) 2.0 v gs = ?4.5 v ?1 v 02 0 ?1.25 v ?1.5 v ?1.75 v 0.25 0.2 1.6 2 1000 0.25 0.5 0.75 0.15 v gs = ?4.5, ?3.5 & ?2.5 v figure 6. drain?to?source leakage current vs. voltage 0.4 1 0.2 ?i d, drain current (amps) 0.5 0 r ds(on), drain?to?source resistance ( ) v gs = ?4.5 v 0.1 0.4 v gs = ?2.5 v 0.7 0.9 0.3 0.5 0.9 10 t j = 125 c t j = ?55 c 0.5 0.8 0.6 0.2 t j = 25 c 1.8 1.6 1.4 1.2 t j = 125 c t j = 150 c 2.5 3 0.2 0.3 0.4 0.5 0.6 v ds ?20 v
ntjd4158c, NVJD4158C www. onsemi.com 6 typical p?channel performance curves (t j = 25 c unless otherwise noted) v ds = 0 v v gs = 0 v 0 10 10 350 150 100 50 0 20 gate?to?source or drain?to?source voltage (volts) c, capacitance (pf) 0 4 1 0 q g , total gate charge (nc) ?v gs, gate?to?source vol tage (volts) t j = 25 c c oss c iss c rss i d = ?0.88 a t j = 25 c 250 1.2 0.8 2 3 q2 q1 10 1 10 1 100 r g , gate resistance (ohms) t, time (ns) v dd = ?10 v i d = ?0.8 a v gs = ?4.5 v 5 200 5 t d(off) t d(on) t f t r v gs v ds 15 0.4 0.6 0 ?v sd , source?to?drain voltage (volts) ?i s , source current (amps) v gs = 0 v t j = 25 c 0.7 0.1 0 0.3 0.5 figure 7. capacitance variation figure 8. gate?to?source voltage vs. total gate charge figure 9. resistive switching time variation vs. gate resistance figure 10. diode forward voltage vs. current 5 300 2 1.6 qt 100 0.2 0.5 0.3 0.1 0.2 0.4 0.4 ordering information device marking package shipping ? ntjd4158ct1g tcd sc?88 (pb?free) 3000 / tape & reel ntjd4158ct2g tcd NVJD4158Ct1g* vcd ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specifications brochure, brd8011/d. *nv prefix for automotive and other applications requiring unique site and control change requirements; aec?q101 qualified and ppap capable.
ntjd4158c, NVJD4158C www. onsemi.com 7 package dimensions sc?88/sc70?6/sot?363 case 419b?02 issue y style 26: pin 1. source 1 2. gate 1 3. drain 2 4. source 2 5. gate 2 6. drain 1 notes: 1. dimensioning and tolerancing per asme y14.5m, 1994. 2. controlling dimension: millimeters. 3. dimensions d and e1 do not include mold flash, protrusions, or gate burrs. mold flash, protru- sions, or gate burrs shall not exceed 0.20 per end. 4. dimensions d and e1 at the outermost extremes of the plastic body and datum h. 5. datums a and b are determined at datum h. 6. dimensions b and c apply to the flat section of the lead between 0.08 and 0.15 from the tip. 7. dimension b does not include dambar protrusion. allowable dambar protrusion shall be 0.08 total in excess of dimension b at maximum material condi- tion. the dambar cannot be located on the lower radius of the foot. c ddd m 123 a1 a c 654 e b 6x dim min nom max millimeters a ??? ??? 1.10 a1 0.00 ??? 0.10 ddd b 0.15 0.20 0.25 c 0.08 0.15 0.22 d 1.80 2.00 2.20 ??? ??? 0.043 0.000 ??? 0.004 0.006 0.008 0.010 0.003 0.006 0.009 0.070 0.078 0.086 min nom max inches 0.10 0.004 e1 1.15 1.25 1.35 e 0.65 bsc l 0.26 0.36 0.46 2.00 2.10 2.20 0.045 0.049 0.053 0.026 bsc 0.010 0.014 0.018 0.078 0.082 0.086 *for additional information on our pb?free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* 0.65 0.66 6x dimensions: millimeters 0.30 pitch 2.50 6x recommended top view side view end view bbb h b seating plane detail a e a2 0.70 0.90 1.00 0.027 0.035 0.039 l2 0.15 bsc 0.006 bsc aaa 0.15 0.006 bbb 0.30 0.012 ccc 0.10 0.004 a-b d aaa c 2x 3 tips d e1 d e a 2x aaa h d 2x d l plane detail a h gage l2 c ccc c a2 6x p ublication ordering information n. american technical support : 800?282?9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81?3?5817?1050 ntjd4158c/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303?675?2175 or 800?344?3860 toll free usa/canada fax : 303?675?2176 or 800?344?3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your loc al sales representative on semiconductor and the are registered trademarks of semiconductor components industries, llc (scillc) or its subsidia ries in the united states and/or other countries. scillc owns the rights to a number of pa tents, trademarks, copyrights, trade secret s, and other intellectual property. a listin g of scillc?s product/patent coverage may be accessed at www.onsemi.com/site/pdf/patent?marking.pdf. scillc reserves the right to make changes without further notice to any product s herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any part icular purpose, nor does sci llc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ?typi cal? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating param eters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the right s of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgic al implant into the body, or other applications intended to s upport or sustain life, or for any other application in which the failure of the scillc product could create a situation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer s hall indemnify and hold scillc and its officers , employees, subsidiaries, affiliates, and dist ributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufac ture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner.
|
